SI6415DQ vishay siliconix document number: 70639 s-49519erev. b, 18-dec-96 www.vishay.com faxback 408-970-5600 2-1 p-channel 30-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 30 0.019 @ v gs = 10 v 6.5 30 0.030 @ v gs = 4.5 v 5.2 SI6415DQ d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view s* g d p-channel mosfet * source pins 2, 3, 6 and 7 must be tied common.
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 6.5 a continuous drain current (t j = 150 c) a t a = 70 c i d 5.2 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 1.5 maximum power dissipation a t a = 25 c p d 1.5 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 83 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI6415DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70639 s-49519erev. b, 18-dec-96
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